Determination of oxygen concentration in heavily doped siliconGOLDSTEIN, M; CHU, P. K; BLEILER, R. J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 92-98, issn 1071-1023Article

Elimination of in-process multilevel interconnect stress voids through optimization of plasma enhanced chemical vapor oxide deposition parametersGRIVNA, G; LEATHERSICH, C; SHIN, H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 55-60, issn 1071-1023Article

Elimination of planar faults in lattice-matched heteroepitaxial films using ion-assisted molecular-beam epitaxyCHOI, C.-H; HULTMAN, L; BARNETT, S. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 1-5, issn 1071-1023Article

Laser induced deposition of tungsten on GaAs from WF₆LECOURS, A; IZQUIERDO, R; TABBAL, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 51-54, issn 1071-1023Article

Measurement of wafer temperature variations using photoresist reticulation thresholdsLUCKMAN, G.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 99-107, issn 1071-1023Article

Mechanism of Si etching reaction in aqueous solutionsYOUNG HUN SEO; MIN HEE YUN; KEE SUK NAHM et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 70-77, issn 1071-1023Article

Observation of a 1.2 eV defect photoluminescence peak in heavily planar-doped n-type GaAs grown by molecular-beam epitaxySADWICK, L. P; REIHLEN, E. H; JAW, D. H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 120-123, issn 1071-1023Article

Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactorsAYDIL, E. S; GIAPIS, K. P; GOTTSCHO, R. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 195-205, issn 1071-1023Conference Paper

Effect of oxygen ions on filling SiO₂ into holes using biased electron cyclotron resonance plasma depositionMACHIDA, K; HASHIMOTO, C; OIKAWA, H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 224-227, issn 1071-1023Conference Paper

Growth of InN for ohmic contact formation by electron cyclotron resonance metalorganic molecular-beam epitaxyABERNATHY, C. R; PEARTON, S. J; REN, F et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 179-182, issn 1071-1023Conference Paper

In situ strain measurements during the formation of palladium silicide filmsBUAUD, P. P; D'HEURLE, F. M; CHEVACHAROENKUL, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 304-310, issn 1071-1023Conference Paper

Model for surface diffusion of aluminum-(1.5%) copper during sputter depositionCALE, T. S; JAIN, M. J; TAYLOR, D. S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 311-318, issn 1071-1023Conference Paper

Nanofabrication techniques for a 100 nm-scale tungsten polycide gate structureAZUMA, T; NAKASUGI, T; OOGI, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2123-2126, issn 1071-1023Conference Paper

Comparison of passivation films : the effect of thermal cycles and comparison of phosphorous doped oxide filmsWU, T. H. T; O'BRIEN, K; HEMMES, D. G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2090-2095, issn 1071-1023Conference Paper

EL-4, a new generation electron-beam lithography systemPFEIFFER, H. C; DAVIS, D. E; ENICHEN, W. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2332-2341, issn 1071-1023Conference Paper

Electron-beam direct writing system EX-8D employing character projection exposure methodHATTORI, K; YOSHIKAWA, R; NISHIMURA, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2346-2351, issn 1071-1023Conference Paper

Electrostatic force microscope imaging analyzed by the surface charge methodWATANABE, S; HANE, K; OHYE, T et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1774-1781, issn 1071-1023Conference Paper

Generation and applications of compressive stress induced by low energy ion beam bombardmentMCKENZIE, D. R.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1928-1935, issn 1071-1023Conference Paper

Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAsMELVILLE, D. L; SIMMONS, J. G; THOMPSON, D. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2038-2045, issn 1071-1023Conference Paper

Investigations of artificial nanostructures and lithography techniques with a scanning probe microscopeGRIESINGER, U. A; KADEN, C; KRETZ, J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2441-2445, issn 1071-1023Conference Paper

Marks for alignment and registration in projection electron lithographyFARROW, R. C; LIDDLE, J. A; BERGER, S. D et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2175-2178, issn 1071-1023Conference Paper

Metallization of W/Co-Ti/Si and simultaneous formation of diffusion barrier and shallow CoSi₂ contact in normal flowing-nitrogen furnaceFANN-MEI YANG; JAW-GI PENG; TSUNG-SHIEW HUANG et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1798-1806, issn 1071-1023Conference Paper

Remote plasma etching reactors : modeling and experimentDESHMUKH, S. C; ECONOMOU, D. J.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 206-215, issn 1071-1023Conference Paper

Sub-100 nm pattern formation using a novel lithography with SiN_x resist by focused ion beam exposure and dry-etching developmentTAKAHASHI, S; OHASHI, M; FUKATSU, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 268-274, issn 1071-1023Conference Paper

Arsenic reflection from GaAs and AlGaAs surfaces during molecular-beam epitaxySPRINGTHORPE, A. J; ARENT, D. J.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 783-786, issn 1071-1023Conference Paper